Adsorption and dimer exchange processes in surfactant-mediated epitaxial growth of GaAs/InAs

Surface Science

Volumn 415, Issue 1-2, 1998, Pages 20-28

  Miwa, R H ^a   Ferraz, A C ^b   Rodrigues, W N ^c   Chacham, H ^c  

^a FEDERAL UNIVERSITY OF UBERLÂNDIA   (Brazil)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

^c FEDERAL UNIVERSITY OF MINAS GERAIS   (Brazil)

Author keywords

Adatoms; Chemisorption; Density functional calculations; Gallium arsenide; Growth process; Indium arsenide; Tellurium

Indexed keywords

ADSORPTION; CHEMISORPTION; DEPOSITION; DIMERS; EPITAXIAL GROWTH; INTERFACIAL ENERGY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING TELLURIUM; SEMICONDUCTOR GROWTH; SURFACE ACTIVE AGENTS;

ADATOMS; DENSITY FUNCTIONAL THEORY;

HETEROJUNCTIONS;

EID: 0032155235     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00427-0     Document Type: Article

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