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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 4, 1998, Pages 1786-1789

Layer by layer growth mode stabilization and step-edge smoothing of cation-stabilized In 1-xGa xAs strained layers grown on InP

(4) Robach, Y a Solere A a,b Gendry, M b Porte, L a,b

a ECOLE CENTRALE DE LYON (France)

b LEAME (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006760038 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (7)

References (18)

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