Three-dimensional carrier confinement in strain-induced self-assembled quantum dots

MRS Bulletin

Volumn 21, Issue 4, 1996, Pages 50-54

  Petroff, P M ^a   Medeiros Ribeiro, G ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BAND STRUCTURE; EPITAXIAL GROWTH; LATTICE CONSTANTS; OPTICAL PROPERTIES; PHASE TRANSITIONS; PHYSICAL PROPERTIES; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; STRAIN; THREE DIMENSIONAL; TRANSMISSION ELECTRON MICROSCOPY;

CARRIER CONFINEMENT; LATTICE MISMATCH; SELF ASSEMBLING METHOD; STRAIN EFFECTS; TWO DIMENSIONAL;

SEMICONDUCTOR GROWTH;

EID: 0030124732     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/S088376940003534X     Document Type: Article

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