SCOPUS 정보 검색 플랫폼

Volumn 63, Issue 4, 2001, Pages 413011-413014

Reaction path for Te during surfactant-mediated epitaxial growth of gaAs (100)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; SURFACTANT; TELLURIUM;

ARTICLE; CRYSTALLIZATION; ENERGY TRANSFER; MOLECULAR INTERACTION; REACTION ANALYSIS;

EID: 0035131518 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/physrevb.63.041301 Document Type: Article

Times cited : (6)

References (20)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.