Hall photovoltage deep-level spectroscopy of GaN films

Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 20, 2001, Pages

  Shalish, I ^a   de Oliveira, C E M ^b   Shapira, Yoram ^b   Salzman, J ^c  

^a HARVARD UNIVERSITY   (United States)

^b TEL AVIV UNIVERSITY   (Israel)

^c TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM; NITROGEN;

ANALYTIC METHOD; ARTICLE; ELECTRIC POTENTIAL; EQUILIBRIUM CONSTANT; FILM; LIGHT; LUMINESCENCE; MATHEMATICAL ANALYSIS; MATHEMATICAL COMPUTING; PHOTOCHEMISTRY; SEMICONDUCTOR; SPECTRAL SENSITIVITY; SPECTROSCOPY; SURFACE PROPERTY;

EID: 0035891187     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.64.205313     Document Type: Article

References (46)

1. S. Nakamura, Proc. SPIE2693, 43 (1996).
2. J D. Brown, Yu Zhonghai, H. Matthews, S. Harney, J. Boney, J. Schetzina, J D. Benson, K W. Dang, C. Terrill, T. Nohava, Yang Wei, and S. Krishnankutty, MRS Internet J. Nitride Semicond. Res.4, 1 (1999).
3. P M. Bridger, Z Z. Bandic, E C. Piquette, and T C. McGill, Appl. Phys. Lett.73, 3438 (1998).
4. B. Beaumont, P. Gibrat, M. Vaille, S. Haffouz, G. Nataf, and A. Bouille, J. Cryst. Growth189–190, 97 (1998).
5. F A. Ponce and D P. Bour, Nature (London)386, 351 (1997).
6. D. Kapolnek, S. Keller, R. Vetury, R D. Underwood, P. Kozodoy, S P. Den Baars, and U K. Mishra, Appl. Phys. Lett.71, 1204 (1997).
7. T S. Zheleva, O K. Nam, M D. Bremser, and R F. Davis, Appl. Phys. Lett.71, 2472 (1997).
8. T. Ogino and M. Aoki, Jpn. J. Appl. Phys.19, 2395 (1980).
9. C V. Reddy, K. Balakrishnan, H. Okumura, and S. Yoshida, Appl. Phys. Lett.73, 244 (1998).
10. I. Shalish, L. Kronik, G. Segal, Y. Shapira, S. Zamir, B. Meyler, and J. Salzman, Phys. Rev. B61, 15 573 (2000).
11. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), p. 34.
12. R H. Bube and H E. McDonald, Phys. Rev.128, 2062 (1962).
13. A L. Lin, E. Omelianovski, and R H. Bube, J. Appl. Phys.47, 1852 (1976).
14. D C. Look and E. Pimentel, Appl. Phys. Lett.51, 1614 (1984).
15. J. Salzman, C. Uzan-Saguy, R. Kalish, V. Richter, and B. Meyler, Appl. Phys. Lett.76, 1431 (2000).
16. Z. Bougrioua, J.-L. Farvacque, I. Moerman, P. Demeester, J J. Harris, K. Lee, G. van Tendeloo, O. Lebedev, and E J. Thrush, Phys. Status Solidi B216, 571 (1999).
17. P. Kordos, M. Morvic, J. Betko, J M. van Hove, A M. Wowchak, and P P. Chow, J. Appl. Phys.88, 5821 (2000).
18. H. Morkoç, Mater. Sci. Forum239–241, 119 (1997).
19. R H. Bube, Appl. Phys. Lett.13, 136 (1968).
20. The cross section of the columns is typically round, while we consider square grains. We expect this difference to introduce an error, but not to affect the qualitative dependence of the Hall coefficient on the density of charges at the grain boundaries, as obtained from this simplified model.
21. Reference 11, p. 256, Eq. (23).
22. Z Z. Bandic, P M. Bridger, E C. Piquette, and T C. McGill, Appl. Phys. Lett.72, 3166 (1998).
23. J Y W. Seto, J. Appl. Phys.46, 5247 (1975)
24. M. Leibovitch, L. Kronik, E. Fefer, and Y. Shapira, Phys. Rev. B50, 1739 (1994).
25. E. Calleja, F J. Sánchez, D. Basak, M A. Sánchez-Garcia, E. Muñoz, I. Izpura, F. Calle, J M G. Tijero, J L. Sánches-Rojas, B. Beaumont, P. Lorenzini, and P. Gibrat, Phys. Rev. B55, 4689 (1997).
26. I. Shalish, L. Kronik, G. Segal, Y. Shapira, M. Eizenberg, and J. Salzman, Appl. Phys. Lett.77, 987 (2000).
27. J. Salzman, C. Uzan-Saguy, R. Kalish, V. Richter, and B. Meyler, Appl. Phys. Lett.76, 1431 (2000).
28. L. Kronik and Y. Shapira, Surf. Sci. Rep.37, 1 (1999).
29. A. Many, Y. Goldstein, and N. B. Grover, Semiconductor Surfaces, 2nd edition (North-Holland, Amsterdam, 1971).
30. The study of the dwell time effect on SPV has not been published, but some of the results were shown in Fig. 61 of Ref. 27. It is important to note that the required dwell time is derived from properties of the deep levels and therefore should be established per sample type. The response times of the samples do not vary among SPV, PC, and Hall photovoltage reported here, as all of these spectroscopies employed the same optical excitation.
31. I. Shalish, L. Kronik, G. Segal, Y. Rosenwaks, Y. Shapira, U. Tisch, and J. Salzman, Phys. Rev. B59, 9748 (1999).
32. H C. Gatos and J. Lagowski, J. Vac. Sci. Technol.10, 130 (1973).
33. D M. Hofmann, D. Kovalev, G. Steude, B K. Meyer, A. Hoffmann, L. Eckey, R. Heitz, T. Detchprom, H. Amano, and I. Akasaki, Phys. Rev. B52, 16 702 (1995).
34. M. Toth, K. Fleischer, and M R. Phillips, Phys. Rev. B59, 1575 (1999).
35. M A. Reshchikov, F. Shahedipour, R Y. Korotkov, B W. Wessels, and M P. Ulmer, J. Appl. Phys.87, 3351 (2000).
36. H B. DeVore, Phys. Rev.102, 86 (1956).
37. A. Rose, Concepts in Photoconductivity and Allied Problems (Wiley, New York, 1963), p. 64.
38. S C. Jain, M. Willander, J. Narayan, and R. Van Overstraeten, J. Appl. Phys.87, 965 (2000).
39. J Y W. Seto, J. Appl. Phys.46, 5247 (1975).
40. H J. Queisser and D E. Theodorou, Phys. Rev. Lett.43, 401 (1979).
41. T. Mattila, A P. Seitson, and R M. Nieminen, Phys. Rev. B54, 1474 (1996).
42. S J. Xu, G. Li, S J. Chua, X C. Wang, and W. Wang, Appl. Phys. Lett.72, 2451 (1998).
43. C. Wetzel, T. Suski, J W. Ager, III, E R. Weber, E E. Haller, S. Fischer, B K. Meyer, R J. Molnar, and P. Perlin, Phys. Rev. Lett.78, 3923 (1997).
44. D. Lang, in Deep Centers in Semiconductors, 2nd ed., edited by S. T. Pantelides (Gordon & Breach, Philadelphia, 1992), pp. 591–641.
45. D K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 1990).
46. G. Rutch, R P. Devaty, W J. Choyke, D W. Langer, and L B. Rowland, J. Appl. Phys.84, 2062 (1998).