Grain-boundary-controlled transport in GaN layers

Physical Review B - Condensed Matter and Materials Physics

Volumn 61, Issue 23, 2000, Pages 15573-15576

  Shalish, I ^a   Kronik, L ^a   Segal, G ^a   Shapira, Yoram ^a   Zamir, S ^b   Meyler, B ^b   Salzman, J ^b  

^a TEL AVIV UNIVERSITY   (Israel)

^b TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000853643     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.61.15573     Document Type: Article

References (25)

1. S. Nakamura and G. Fasol, The Blue Laser Diode-GaN Based Light Emitters and Lasers (Springer-Verlag, Berlin, 1997).
2. F. A. Ponce and D. P. Bour, Nature (London) 386, 351 (1997).
3. J. Y. W. Seto, J. Appl. Phys. 46, 5247 (1975).
4. M. Fehrer, S. Einfeldt, U. Birkle, T. Gollnik, and D. Hommel, J. Cryst. Growth 189/190, 763 (1998).
5. C. Uzan-Sagui, J. Salzman, R. Kalish, V. Richter, U. Tisch, and S. Zamir, Appl. Phys. Lett. 74, 2442 (1999).
6. H. M. Chen, Y. F. Chen, M. C. Lee, and M. S. Feng, Phys. Rev. B 56, 6942 (1997).
7. C. V. Reddy, K. Balakrishnan, H. Okumura, and S. Yoshida, Appl. Phys. Lett. 73, 244 (1998).
8. F. Binet, J. Y. Duboz, E. Rosencher, F. Scholz, and V. Härle, Appl. Phys. Lett. 69, 1202 (1996).
9. E. Muñoz, E. Monroy, J. A. Garrido, I. Izpura, F. J. Sánchez, M. A. Sánchez-Garcia, E. Calleja, B. Beuamont, and P. Gibart, Appl. Phys. Lett. 69, 1202 (1997).
10. L. L. Kazmerski, in Polycrystalline and Amorphous Thin Films and Devices, edited by L. L. Kzamerski (Academic, New York, 1980), p. 98.
11. M. J. Cohen, J. S. Harris, and J. R. Waldrop, in Gallium Arsenide and Related Compounds, edited by C. Wolfe, IOP Conf. Ser. No. 45 (Institute of Physics, London, 1979), p. 263.
12. H. C. Gatos and J. Lagowski, J. Vac. Sci. Technol. 10, 130 (1973).
13. L. Kronik and Y. Shapira, Surf. Sci. Rep. 37, 1 (1999).
14. M. Leibovitch, L. Kronik, E. Fefer, and Y. Shapira, Phys. Rev. B 50, 1739 (1994).
15. O. B. Aphek, L. Kronik, M. Leibovitch, and Y. Shapira, Surf. Sci. 409, 485 (1998).
16. I. Shalish, L. Kronik, G. Segal, Y. Rosenwaks, Y. Shapira, U. Tisch, and J. Salzman, Phys. Rev. B 59, 9748 (1999).
17. T. Suski, P. Perlin, H. Teisseyre, M. Leszczynski, I. Grzeogry, J. Jun, M. Bockowski, S. Porowski, and T. D. Moustakas, Appl. Phys. Lett. 67, 2188 (1995).
18. E. Calleja, F. J. Sánchez, D. Basak, M. A. Sánchez-Garcia, E. Muñoz, I. Izpura, F. Calle, J. M. G. Tijero, J. L. Sánches-Rojas, B. Beaumont, P. Lorenzini, and P. Gibrat, Phys. Rev. B 55, 4689 (1997).
19. H. B. DeVore, Phys. Rev. 102, 86 (1956).
20. P. de Mierry, O. Ambacher, H. Kratzer, and M. Stutzmann, Phys. Status Solidi A158, 597 (1996).
21. J. Kang and T. Ogawa, J. Mater. Res. 13, 2100 (1998).
22. T. Mattila, A. P. Seitsonen, and R. M. Nieminen, Phys. Rev. B 54, 1474 (1996).
23. S. J. Xu, G. Li, S. J. Chua, X. C. Wang, and W. Wang, Appl. Phys. Lett. 72, 2451 (1998).
24. D. Lang, in Deep Centers in Semiconductors, 2nd ed., edited by S. T. Pantelides (Gordon & Breach, Philadelphia, 1992), pp. 591-641.
25. J. A. Garrido, E. Monroy, I. Izpura, and E. Muñoz, Semicond. Sci. Technol. 13, 563 (1998).