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Volumn 13, Issue 32, 2001, Pages 6993-7010

In inhomogeneity and emission characteristics of InGaN

(7) Kawakami, Yoichi a Omae, Kunimichi a Kaneta, Akio a Okamoto, Koichi a Narukawa, Yukio b Mukai, Takashi b Fujita, Shigeo a

a KYOTO UNIVERSITY (Japan)

b NICHIA CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; GALLIUM NITRIDE; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; POINT DEFECTS; SEMICONDUCTOR QUANTUM WELLS; SPONTANEOUS EMISSION; THERMAL EFFECTS;

NONRADIATIVE RECOMBINATION CENTERS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0035855044 PISSN: 09538984 EISSN: None Source Type: Journal
DOI: 10.1088/0953-8984/13/32/308 Document Type: Article

Times cited : (35)

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