Spatial inhomogeneity of photoluminescence in an InGaN-based light-emitting diode structure probed by near-field optical microscopy under illumination-collection mode

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 1, 2001, Pages 110-111

  Kaneta, Akio ^a   Izumi, Tomoaki ^a   Okamoto, Koichi ^a   Kawakami, Yoichi ^a   Fujita, Shigeo ^a   Narita, Yoshihito ^b   Inoue, Tsutomu ^b   Mukai, Takashi ^c  

^a KYOTO UNIVERSITY   (Japan)

^b Hachioji shi   (Japan)

^c NICHIA CORPORATION   (Japan)

Author keywords

Illumination collection mode; InGaN; PL mapping image; SNOM; Spatial inhomogeneity

Indexed keywords

LIGHT EMISSION; LUMINESCENCE OF SOLIDS; NITRIDES; OPTICAL MICROSCOPY; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

INDIUM GALLIUM NITRIDE;

LIGHT EMITTING DIODES;

EID: 0035060848     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.40.110     Document Type: Article

References (15)