The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in InxGa1-xN quantum wells

MRS Internet Journal of Nitride Semiconductor Research

Volumn 5, Issue , 2000, Pages

  Shapiro, N A ^a,b   Perlin, Piotr ^a,b,c   Kisielowski, Christian ^a   Mattos, L S ^a,b   Yang, J W ^d   Weber, Eicke R ^a,b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^d APA Optronics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LOSS SPECTROSCOPY; LIGHT EMITTING DIODES; LUMINESCENCE; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PIEZOELECTRICITY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; STATISTICAL METHODS; TRANSMISSION ELECTRON MICROSCOPY;

MULTI-QUANTUM WELLS; PIEZOELECTRIC FIELDS; RADIATIVE RECOMBINATION ENERGY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84862393243     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300000016     Document Type: Article

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