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Volumn 2, Issue , 2001, Pages 333-336
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Analysis of static and dynamic behaviour of SiC and Si devices connected in cascode configuration
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC BREAKDOWN OF SOLIDS;
ELECTRIC FIELD EFFECTS;
ELECTRON MOBILITY;
ENERGY GAP;
FIELD EFFECT TRANSISTORS;
MOSFET DEVICES;
NUMERICAL ANALYSIS;
VOLTAGE CONTROL;
BLOCK VOLTAGES;
CASCODE CONFIGURATION;
SILICON CARBIDE;
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EID: 0035744640
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (14)
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References (17)
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