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Volumn 2, Issue , 2001, Pages 333-336

Analysis of static and dynamic behaviour of SiC and Si devices connected in cascode configuration

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELD EFFECTS; ELECTRON MOBILITY; ENERGY GAP; FIELD EFFECT TRANSISTORS; MOSFET DEVICES; NUMERICAL ANALYSIS; VOLTAGE CONTROL;

EID: 0035744640     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (14)

References (17)
  • 16
    • 0003919350 scopus 로고    scopus 로고
    • A comparison of modern power devices concepts for high voltage applications: FS-IGBT, compensation devices and SiC devices
    • (private communication)
    • (2000)
    • Deboy, G.1    Husken, H.2    Mitlehner, H.3    Rupp, R.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.