High dose-rate hydrogen passivation of polycrystalline silicon CMOS TFT's by plasma ion implantation

IEEE Transactions on Electron Devices

Volumn 43, Issue 11, 1996, Pages 1876-1882

  Bernstein, James D ^a   Qin, Shu ^a   Chan, Chung ^a   King, Tsu Jae ^a  

^a NORTHEASTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); HYDROGENATION; ION IMPLANTATION; OXIDES; PASSIVATION; PLASMA APPLICATIONS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON;

DEFECT PASSIVATION; GATE OXIDE CHARGING; PLASMA ION IMPLANTATION (PII);

THIN FILM TRANSISTORS;

EID: 0030287461     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.543022     Document Type: Article

References (21)

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