GaN-based optoelectronic devices on sapphire and Si substrates

Materials Science in Semiconductor Processing

Volumn 4, Issue 6, 2001, Pages 459-466

  Umeno, Masayoshi ^a   Egawa, Takashi ^a   Ishikawa, Hiroyasu ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

2DEG; AlGaN GaN HEMT; GaN MESFET; GaN on Si; InGaN LED

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRON MOBILITY; GALLIUM NITRIDE; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; MESFET DEVICES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; TRANSCONDUCTANCE;

DRAIN-SOURCE CURRENTS;

LIGHT EMITTING DIODES;

EID: 0035574859     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(02)00003-3     Document Type: Conference Paper

References (19)

1. Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors
2. High Al-content AlGaN/GaN MODFET's for ultrahigh performance
3. Two-dimensional electron gas properties of AlGaN/GaN heterostructures grown on 6H-SiC and sapphire substrates
4. GaN FET's for microwave and high-temperature applications
5. Recessed gate GaN MODFETs
6. Characteristics of a GaN metal semiconductor field-effect transistor grown on a sapphire substrate by metalorganic chemical vapor deposition
7. Ultraviolet and violet GaN light emitting diodes on silicon
8. High electron mobility AlGaN/GaN heterostructure on (1 1 1)Si
9. Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy
10. Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes
11. High dislocation densities in high efficiency GaN-based light-emitting diodes
12. Optical degradation of InGaN/AlGaN light-emitting diode on sapphire substrate grown by metalorganic chemical vapor deposition
13. Characteristics of InGaN/AlGaN light-emitting diodes on sapphire substrates
14. Selective area deposited blue GaN-InGaN multiple-quantum well light emitting diodes over silicon substrates
15. Bright blue electroluminescence from an InGaN/GaN multiquantum-well diode on Si(1 1 1): Impact of an AlGaN/GaN multilayer
16. GaN on Si substrate with AlGaN/AlN intermediate layer
17. Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire
18. Structure and lateral diffusion of ohmic contacts in AlGaAs/GaAs high electron mobility transistors and GaAs devices
19. Self-heating in high-power AlGaN-GaN HFET's