Electrical effects of N2 plasma exposure on dry-etch damage in p- and n-GaN Schottky diodes

Solid-State Electronics

Volumn 45, Issue 10, 2001, Pages 1837-1842

  Kent, D G ^a   Lee, K P ^a   Zhang, A P ^b   Luo, B ^b   Overberg, M E ^a   Abernathy, C R ^a   Ren, F ^b   Mackenzie, K D ^c   Pearton, S J ^a   Nakagawa, Y ^d  

^a UNIVERSITY OF FLORIDA   (United States)

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^c Unaxis USA Inc   (United States)

^d NICHIA CORPORATION   (Japan)

Author keywords

AFM surface roughness; Annealing recovery; Chamber pressure effect; Nitridation of nitride substrate; p and n GaN Schottky diodes; Plasma damage

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; DRY ETCHING; ELECTRIC BREAKDOWN; GALLIUM NITRIDE; PLASMA ETCHING; PRESSURE EFFECTS; SURFACE TREATMENT;

PLASMA DAMAGE;

SCHOTTKY BARRIER DIODES;

EID: 0035478957     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00248-9     Document Type: Article

References (21)

1. ICP etching of GaN and related alloys
2. Properties, processing and applications of GaN and related semiconductors
3. Properties and applications of GaN and related semiconductors