Design and performance of a vertical cavity surface emitting laser based on III-V quaternary semiconductor alloys for operation at 1.55 μm

IEEE Transactions on Electron Devices

Volumn 48, Issue 10, 2001, Pages 2228-2237

  Linnik, M ^b   Christou, A ^a,b  

^a IEEE

^b UNIVERSITY OF MARYLAND   (United States)

Author keywords

DBR; Energy bandgap; Gain; Index of refraction; Quaternary alloys; VCSEL

Indexed keywords

ALLOYS; ELECTRIC CURRENTS; ENERGY GAP; MIRRORS; MOLECULAR BEAM EPITAXY; OXIDATION; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

BANDGAP ENERGY; DISTRIBUTED BRAGG REFLECTOR; QUATERNARY SEMICONDUCTOR ALLOY; THRESHOLD CURRENT; VERTICAL CAVITY SURFACE EMITTING LASER;

SEMICONDUCTOR LASERS;

EID: 0035472004     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.954459     Document Type: Article

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