High power operation of widely tunable 1.55μm distributed Bragg reflector laser

Electronics Letters

Volumn 33, Issue 3, 1997, Pages 210-211

  Delorme, F ^a   Grosmaire, S ^a   Gloukhian, A ^a   Ougazzaden, A ^a  

^a ORANGE LABS   (France)

Author keywords

Distributed Bragg reflector lasers; Semiconductor junction lasers

Indexed keywords

ELECTRIC CURRENTS; FIBER LASERS; METALLORGANIC VAPOR PHASE EPITAXY; MIRRORS; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

BRAGG CURRENTS; DISTRIBUTED BRAGG REFLECTOR LASERS; LASER EMISSION; SEMICONDUCTOR JUNCTION LASERS; SIDEMODE SUPPRESSION RATIO; THRESHOLD CURRENTS;

SEMICONDUCTOR LASERS;

EID: 0030813296     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970143     Document Type: Article

References (7)

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