Optically pumped, monolithic, all-epitaxial 1.56μm vertical cavity surface emitting laser using Sb-based reflectors

Electronics Letters

Volumn 33, Issue 22, 1997, Pages 1878-1880

  Blum, O ^a   Klem, J F ^a   Lear, K L ^a   Vawter, G A ^a   Kurtz, S R ^a  

^a NONE

Author keywords

Molecular beam epitaxial growth; Vertical cavity surface emitting lasers

Indexed keywords

CONTINUOUS WAVE LASERS; EPITAXIAL GROWTH; LIGHT EMISSION; MIRRORS; MOLECULAR BEAM EPITAXY; OPTICAL PUMPING; SEMICONDUCTING ANTIMONY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

DISTRIBUTED BRAGG REFLECTORS; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0031250889     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19971284     Document Type: Article

References (11)

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