Molecular beam epitaxy growth of 1.3 μm high-reflectivity AlGaAsSb/AlAsSb Bragg mirror

Electronics Letters

Volumn 33, Issue 14, 1997, Pages 1227-1228

  Almuneau, G ^a   Genty, F ^a,c   Chusseau, L ^a   Bertru, N ^a   Fraisse, B ^b   Jacquet, J ^c  

^a UNIVERSITÉ MONTPELLIER II   (France)

^b UNIVERSITÉ DE MONTPELLIER   (France)

^c NOKIA RESEARCH CENTER   (United States)

Author keywords

Distributed Bragg reflector lasers; Molecular beam epitaxial growth

Indexed keywords

ELECTROMAGNETIC WAVE DIFFRACTION; LIGHT ABSORPTION; LIGHT REFLECTION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS;

DISTRIBUTED BRAGG REFLECTOR (DBR) LASERS;

MIRRORS;

EID: 0031551222     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970830     Document Type: Article

References (6)

1. LAMBERT, B., TOUDIC, Y., ROUILLARD, Y., GAUNEAU, M., BAUDET, M., ALARD, F., VALIENTE, I., and SIMON, J.C.: 'High reflectivity 1.55μm (Al)GaAsSb/AlAsSb Bragg reflector lattice-matched on InP substrates', Appl. Phys. Lett., 1995, 66, pp. 442
2. GENTY, F., ALMUNEAU, G., CHUSSEAU, L., BOISSIER, G., MALZAC, J.P., SALET, P., and JACQUET, J.: 'High reflectivity Te-doped GaAsSb/AlAsSb Bragg mirror for 1.5μm surface emitting lasers', Electron. Lett., 1997, 33, pp. 140
3. DIAS, I.F.L., NABET, B., KOHL, A., and HARMAND, J.C.: 'High reflectivity low resistance Te doped AlGaAsSb/AlAsSb Bragg mirror', Electron. Lett., 1997, 33, pp. 716
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