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Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 372-376

Molecular beam epitaxy of AlGaAsSb system for 1.55 μm Bragg mirrors

(4) Harmand, J C a Kohl, A a Juhel, M a Le Roux, G a

a ORANGE LABS (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPOSITION EFFECTS; CRACK INITIATION; CRYSTAL LATTICES; ELECTRIC CONDUCTIVITY OF SOLIDS; MIRRORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; TRANSPARENCY;

BRAGG MIRRORS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031143959 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)00883-4 Document Type: Article

Times cited : (26)

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