The influence of tensile strain on differential gain and auger recombination in 1.5-μm multiple-quantum-well lasers

IEEE Journal of Quantum Electronics

Volumn 34, Issue 5, 1998, Pages 822-832

  Jones, G ^a,b   Smith, A D ^c,d   O'Reilly, E P ^a   Silver, Mark ^a,c,e,f   Briggs, Alan T R ^c,g,h   Fice, M J ^c   Adams, Alf R ^a   Greene, P David ^c   Scarrott, K ^c   Vranic, A ^c  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b Epitaxial Prod International Ltd   (United Kingdom)

^c NORTEL NETWORKS   (Canada)

^d Signal Integrity   (United States)

^e UNIVERSITY OF MANCHESTER   (United Kingdom)

^f MARTLESHAM HEATH   (United Kingdom)

^g UNIVERSITY OF LEEDS   (United Kingdom)

^h Std Telecommunciation Laboratories   (United Kingdom)

Author keywords

Auger recombination; Epitaxial growth; Quantum wells lasers; Semi conductor lasers; Semiconductor device modeling

Indexed keywords

CURRENT DENSITY; EPITAXIAL GROWTH; LIGHT EMISSION; SEMICONDUCTOR DEVICE MODELS; STRAIN; TRANSPARENCY;

AUGER RECOMBINATION; OPTICAL CONFINEMENT FACTOR;

QUANTUM WELL LASERS;

EID: 0032071616     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.668770     Document Type: Article

References (33)

1. P. J. A. Thijs, J. J. M. Binsma, L. F. Tiemeijer, and T. van Dongen, "Progress in long wavelength strained-layer InGaAs(P) quantum well semiconductor lasers and amplifiers," IEEE J. Quantum Electronics, vol. 30. pp. 477-499, 1994.
2. P. J. A. Thijs, J. J. M. Binsma, L. F. Tiemeijer, P. I. Kuindersma, and T. van Dongen, "Low-pressure MOVPE growth and characterization of strained-layer InGaAs-InGaAsP quantum well lasers," Microelectron. Eng., vol. 18, pp. 57-74, 1992.
3. P. J. A. Thijs, J. J. M. Binsma, E. W. A. Young, and W. M. E. van Gils, "High temperature operation of 1.5 μm tensile strained multiple quantum well SIPBH lasers," Electron Lett., vol. 27, pp. 791-793, 1991.
4. C. E. Zah, R. Bhat, B. Pathak, C. Caneau, F. J. Favire, N. C. Andreakis, D. M. Hwang, M. A. Koza, C. Y. Chan, and T. P. Lee, "Low threshold 1.5 μm tensile strained single quantum well lasers," Electron. Lett., vol. 27, pp. 1414-1416, 1991.
5. A. R. Adams, "Band structure engineering for low-threshold high efficiency semiconductor lasers," Electron Lett., vol. 22, pp. 249-250, 1986.
6. S. L. Chuang, J. O'Gorman, and A. F. J. Levi, "Amplified spontaneous emission and carrier pinning in laser diodes," IEEE J. Quantum Electron., vol. 29, pp. 1631-1639, 1993.
7. Y. Zou, J. S. Osinski, P. Grodrinski, P. D. Dapkus, W. C. Rideout, W. F. Sharfin, J. Schlafer, and F. D. Crawford, "Experimental study of Auger recombination, gain, and temperature sensitivity of 1.5 μm compressively strained semiconductors," IEEE J. Quantum Electron., vol. 29, pp. 1565-1575, 1993.
8. o in 1.3 μm semiconductor lasers," IEEE J. Select. Topics Quantum Electron., vol. 1, pp. 250-263, 1995.
9. J. Braithwaite, M. Silver, V. A. Wilkinson, E. P. O'Reilly, and A. R. Adams, "Role of radiative aod nonradiative processes on the temperature sensitivity of strained and unstrained 1.5 μm InGaAs(P) quantum well lasers," Appl. Phys. Lett., vol. 67, pp. 3546-3548, 1995.
10. A. T. R. Briggs, P. D. Greene, and J. M. Jowett, "Gain and threshold characteristics of strain-compensated multiple-quantum-well lasers," IEEE Photon. Technol. Lett., vol. 4, pp. 423-425, 1992.
11. W. T. Tsang, R. Kapre, M. C. Wu, and Y. K. Chen, "Low threshold InGaAs strained-layer quantum well lasers (λ = 0.98 μm) with GaInP cladding layers prepared by chemical beam epitaxy," Appl. Phys. Lett., vol. 61, pp. 755-757, 1992.
12. P. W. A. McIlroy, A. Kurobe, and Y. Uematsu, "Analysis and application of theoretical gain curves to the design of MQW lasers," IEEE J. Quantum Electron., vol. QE-21, pp. 1958-1963, 1985.
13. J. P. Stagg, J. Christer, E. J. Thrush, and J. Crawley, "Measurement and control of reagent concentrations in MOCVD reactor using ultrasonics," J. Cryst. Growth, vol. 120, pp. 98-102, 1992.
14. R. W. Glew, K. Scarrott, A. T. R. Briggs, A. D. Smith, V. A. Wilkinson, X. Zhou, and M. Silver, "Elimination of wavy layer growth phenomena in strain-compensated GaInAsP/GaInAsP multiple-quantum-well stacks," J. Cryst. Growth, vol. 145, pp. 764-770, 1994.
15. T. Makino, "Analytical formulas for the optical gain of quantum wells," IEEE J. Quantum Electron., vol. 32, pp. 493-501, 1996.
16. I. E. A. Whiteaway, G. H. B. Thompson, P. D. Greene, and R. W. Glew, "Logarithmic gain/current-density characteristics of InGaAs/InGaAlAs/InP multi-quantum-well separate-confinement heterostructure lasers," Electron. Lett., vol. 27, pp. 340-342, 1991.
17. W. Streifer, D. R. Scifres, and R. D. Burnham, "Optical analysis of multiple-quantum-well lasers," Appl. Opt., vol. 18, pp. 3547-3548, 1979.
18. P. Togher, "Temperature dependence of the gain for semiconductor lasers," Ph.D. dissertation, University of Surrey, U.K., 1996.
19. M. Silver and E. P. O'Reilly, "Optimization of long wavelength InGaAsP strained quantum well lasers," IEEE J. Quantum Electron., vol. 31, pp. 1193-1200, 1995.
20. M. Asada, A. R. Adams, K. E. Stubkjaer, Y. Suematsu, Y. Itaha, and S. Arai, "The temperature dependence of the threshold current of GaInAsP/InP DH lasers," IEEE J. Quantum Electron., vol. QE-17, pp. 611-619, 1981
21. P. D. Greene, J. E. A. Whiteaway, G. D. Henshall, R. W. Glew, C. M. Lowney, B. Bhumbra, and D. J. Moule, "Optimization and comparison of InP-based quantum well lasers incorporating InGaAlAs and InGaAsP alloys," in Proc. 17th. Int. Symp. on GaAs and Related Compounds, Inst. Phys. Conf. Series, 1990, vol. 112, pp. 555-560.
22. J. S. Osinski, P. Grondzinsky, Y. Zou, and P. D. Dapkus, "Evidence of gain enhancement in long wavelength strained quantum well laser diodes," Electron. Lett., vol. 27, pp. 469-470, 1991.
23. E. P. O'Reilly and M. Silver, "Temperature sensitivity and high temperature operation of long wavelength semiconductor lasers," Appl. Phys. Lett., vol. 63, pp. 3318-3320, 1993.
24. G. Fuchs, J. Hörer, A. Hangleiter, V. Härle, F. Scholz, R. W. Glew, and L. Goldstein, "Intervalence band absorption in strained and unstrained InGaAs multiple quantum well structures," Appl. Phys. Lett., vol. 60, pp. 231-233, 1992.
25. S. Hausser, G. Fuchs, A. Hangleiter, K. Streubel, and W. T. Tsang, "Auger recombination in bulk and quantum well InGaAs," Appl. Phys. Lett., vol. 56, pp. 913-915, 1990.
26. M. C. Wang, K. Kash, C. E. Zah, R. Bhat, and S. L. Chuang, "Measurement of nonradiative Auger and radiative recombination rates in strained-layer quantum well systems," Appl. Phys. Lett., vol. 62, pp. 166-168, 1993.
27. S. Seki, H. Oohashi, H. Sugimura, T. Hirono, and K. Yokoyama, "Study on the dominant mechanisms for the temperature sensitivity of threshold current in 1.3 μm InP based strained-layer quantum-well lasers," IEEE J. Quantum Electron., vol. 32, pp. 1478-1486, 1996.
28. E. P. O'Reilly, G. Jones, M. Silver, and A. R. Adams, "Determination of gain and loss mechanisms in semiconductor lasers using pressure techniques," Phys. Stat. Sol. (b), vol. 198, pp. 363-373, 1996.
29. E. P. O'Reilly and A. R. Adams, "Band-structure engineering in strained semiconductor lasers," IEEE J. Quantum Electron., vol. 30, pp. 366-379, 1994.
30. M. Silver, A. R. Adams, and E. P. O'Reilly, "Determination of the wavelength dependence of Auger recombination in long-wavelength quantum-well semiconductor lasers using hydrostatic pressure," IEEE J. Quantum Electron., vol. 33, pp. 1557-1566, 1997.
31. W. W. Lui, T. Yamanaka, Y. Yoshikuni, K. Yokoyama, and S. Seki, "Suppression of Auger recombination effects in strained InGaAs/InGaAsP quantum well lasers," IEEE J. Quantum Electron., vol. 29, pp. 1544-1552, 1993.
32. 0.47-xAs on InP," IEEE J. Quantum Electron., vol. 29, pp. 2583-2588, 1993.
33. W. W. Lui, T. Yamanaka, Y. Yoshikuni, S. Seki, and K. Yokoyama, "A suppression mechanism of Auger recombination effects in strained quantum wells induced by local negative curvature of the energy band structure," IEEE J. Quantum Electron., vol. 30, pp. 392-398, 1994.