Analytical formulas for the optical gain of quantum wells

IEEE Journal of Quantum Electronics

Volumn 32, Issue 3, 1996, Pages 493-501

  Makino, Toshihiko ^a,b  

^a NORTEL NETWORKS   (Canada)

^b IEEE

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CARRIER CONCENTRATION; ELECTRON ENERGY LEVELS; MATHEMATICAL MODELS; PHOTONS; SEMICONDUCTOR DOPING;

EMPIRICAL LOGARITHMIC GAIN; FERMI FUNCTIONS; LINEWIDTH ENHANCEMENT FACTOR; OPTICAL GAIN; RIDGE WAVEGUIDE LASERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030108028     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.485401     Document Type: Article

References (26)

1. P. J. A. Thijs, L. F. Tiemeijer, J. J. M. Binsma, and T. Van Dongen, "Progress in long-wavelength strained-layer InGaAs(P) quantum well semiconductor lasers and amplifiers," IEEE J. Quantum Electron., vol. 30, pp. 477-499, Feb. 1994.
2. M. Asada, A. Kameyama, and Y. Suematsu, "Gain and intervalence band absorption in quantum-well lasers," IEEE J. Quantum Electron., vol. QE-20, pp. 745-753, July 1984.
3. Y. Arakawa and A. Yariv, "Theory of gain, modulation, response, and spectral linewidth in AlGaAs quantum-well lasers," IEEE J. Quantum Electron., vol. 21, pp. 1666-1674, 1985.
4. I. Suemune, "Theoretical study of differential gain in strained quantum well structures," IEEE J. Quantum. Electron., vol. 27, pp. 1149-1159, May 1991.
5. K. Lau, S. Xin, and W. I. Wang, "Enhancement of modulation bandwidth in InGaAs strained-layer single quantum well lasers," Appl. Phys., Lett., vol. 55, pp. 1173-1175, Sept. 1989.
6. K. Uomi, T. Tsuchiya, H. Nakano, M. Aoki, M. Suzuki, and N. Chinone, "High-speed and ultralow-chirp 1.55μm multiquantum well λ/4-shifted DFB lasers," IEEE J. Quantum Electron., vol. 27, pp. 1705-1713, June 1991.
7. M. Nido, K. Naniwae, J. Shimizu, S. Murata, and A. Suzuki, "Analysis of differential gain in InGaAs-InGaAsP compressive and tensile strained quantum-well lasers and its applications for estimation of high-speed modulation limit," IEEE J. Quantum Electron., vol. 29, pp. 885-895, Mar. 1993.
8. Z.-M. Li, M. Dion, S. P. McAlister, R. L. Williams, and G. C. Aers, "Incorporation of strain into a two-dimensional model of quantum-well semiconductor lasers," IEEE J. Quantum. Electron., vol. 29, pp. 346-354, Feb. 1993.
9. J. Hong, W. P. Huang, and T. Makino, "Effects of linear gain saturation on small-signal dynamics of MQW DFB lasers," IEEE Photon. Technol. Lett., vol. 5, pp. 1373-1376, Dec. 1993.
10. P. W. A. McLlroy, A. Kurobe, and Y. Uematsu, "Analysis and application of theoretical gain curves to the design of multi-quantum-well lasers," IEEE J. Quantum Electron., vol. 21, pp. 1958-1963, Dec. 1985.
11. K. J. Vahala and C. E. Zah, "Effect of doping on the optical gain and the spontaneous noise enhancement factor in quantum well amplifiers by simple analytical expressions," Appl. Phys. Lett., vol. 52, pp. 1945-1947, June 1988.
12. L. D. Westbrook and M. J. Adams, "Explicit approximations for the linewidth-enhancement factor in quantum-well lasers," Proc. IEE, vol. 135, pt. J, pp. 223-225, June 1988.
13. D. Ahn and S. L. Chuang, "Optical gain in a strained-layer quantum-well laser," IEEE J. Quantum Electron., vol. 24, pp. 2400-2406, Dec. 1988.
14. Z.-M. Li, M. Dion, Y. Zou, J. Wang, M. Davies, and S. McAlister, "An approximate k · p theory for optical gain of strained InGaAsP quantum-well lasers,* IEEE J. Quantum Electron., vol. 30, pp. 538-546, Feb. 1994.
15. T.-A. Ma, Z.-M. Li, T. Makino, and M. Wartak, "Approximate optical gain formulas for 1.55 μm strained quaternary quantum well lasers," IEEE J. Quantum Electron., vol. 31, pp. 29-34, Jan. 1995.
16. M. S. Wartak and T. Makino, "Simple evaluation of linewidth-enhancement factor in quantum well laser with strain," J. Appl. Phys., vol. 73, pp. 4715-4717, May 1993.
17. M. Yamanishi and Y. Lee, "Phase damping of optical dipole moments and gain spectra in semiconductor lasers," IEEE J. Quantum Electron., vol. QE-23, pp. 367-370, Apr. 1987.
18. A. Tomita and A. Suzuki, "A new density matrix theory for semiconductor lasers, including no-Markovian intraband relaxation and its application to nonlinear gain," IEEE J. Quantum Electron., vol. 27, pp. 1630-1641, June 1991.
19. J. Z. Wilcox, G. L. Peterson, S. Ou, J. J. Yang, and M. Jansen, "Gain-and threshold-current dependence for multiple-quantum-well lasers," J. Appl Phys., vol. 64, pp. 6564-6567, Dec. 1988.
20. J. E. A. Whiteaway, G. H. B. Thompson, P. D. Greene, and R. W. Glew, "Logarithmic gain/current-density characteristic of InGaAs/InGaAlAs/InP multi-quantum-well separate-confinement-heterostructure lasers," Electron. Lett., vol. 27, pp. 340-342, Feb. 1991.
21. T. A. Detemple and C.M. Herzinger, "On the semiconductor laser logarithmic gain-current density relation," IEEE J. Quantum Electron., vol. 29, pp. 1246-1252, May 1993.
22. M. Rosenzweig, M. Möhrle, H. Düser, and H. Venghaus, "Threshold-current analysis of InGaAs-InGaAsP multiquantum well separate-confinement lasers," IEEE J. Quantum Electron., vol. 27, pp. 1804-1811, June 1991.
23. C. H. Lin and Y. H. Lo, "Empirical formulas for design and optimization of 1.55 μm InGaAs/InGaAsP strained-quantum-well lasers," IEEE Photon. Technol. Lett., vol. 5, pp. 288-290, Mar. 1993.
24. P. W. A. McIlroy, A. Kurobe, and Y. Uematsu, "Analysis and application of theoretical gain curves to the design of multi-quantum-well lasers," IEEE J. Quantum Electron., vol. QE-21, pp. 1958-1963, Dec. 1985.
25. S. L. Chuang, "Efficient band-structure calculations of strained-layer quantum wells," Phys. Rev. B, vol. 43, pp. 9649-9661, Apr. 1991.
26. K. Kikuchi, M. Amano, C. E. Zah, and T. P. Lee, "Measurement of differential gain and linewidth enhancement factor of 1.5 μm strained quantum-well active layers," IEEE J. Quantum Electron., vol. 30, pp. 571-577, Feb. 1994.