Inductively coupled plasma etching of III-V nitrides in CH4/H2/Ar and CH4/H2/N2 chemistries

Journal of the Electrochemical Society

Volumn 144, Issue 8, 1997, Pages 2844-2847

  Vartuli, C B ^a,d   Pearton, S J ^a,d   Lee, J W ^a,d   MacKenzie, J D ^a   Abernathy, C R ^a,d   Shul, R J ^b,d   Constantine, C ^c   Barratt, C ^c  

^a University of Florida   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c Plasma Therm IP   (United States)

^d ELECTROCHEMICAL SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; HYDROGEN; METHANE; PLASMA ETCHING; PRESSURE EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE ROUGHNESS;

INDUCTIVELY COUPLED PLASMA (ICP) ETCHING;

NITRIDES;

EID: 0031212341     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837905     Document Type: Article

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