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Materials Science and Engineering B

Volumn 50, Issue 1-3, 1997, Pages 82-87

Effects of inductively coupled plasma conditions on the etch properties of GaN and ohmic contact formations

(5) Kim, Hyeon Soo a Lee, Yong Hyuk a Yeom, Geun Young a Lee, Jae Won b Kim, Tae Il b

a Sungkyunkwan University (South Korea)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

Etch properties; Inductively coupled plasma; Ohmic contact formation

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; ETCHING; OHMIC CONTACTS; OPTICAL MICROSCOPY; PLASMA APPLICATIONS; SCANNING ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

OPTICAL EMISSION MICROSCOPY (OEM); TRANSMISSION LINE METHOD (TLM);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0002815429 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(97)00173-6 Document Type: Article

Times cited : (20)

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