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Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 19, Issue 5, 2001, Pages 2441-2445

Sticking coefficient of boron and phosphorus on silicon during vapor-phase doping

(2) Kiyota, Yukihiro a Inada, Taroh b

a HITACHI LTD (Japan)

b HOSEI UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; BORON; CHEMICAL VAPOR DEPOSITION; CHEMISORPTION; CRYSTAL IMPURITIES; ION IMPLANTATION; JUNCTION GATE FIELD EFFECT TRANSISTORS; MONOLAYERS; MOS DEVICES; PHOSPHORUS; RATE CONSTANTS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SUPERLATTICES; SURFACE REACTIONS;

STICKING COEFFICIENT;

SILICON WAFERS;

EID: 0035440117 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.1387055 Document Type: Article

Times cited : (15)

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