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Volumn 318, Issue 1-2, 1998, Pages 1-5

Atomic control of doping during SiGe epitaxy

(1)  Tillack, B a  

a IHP   (Germany)

Author keywords

Atomic layer doping; LP(RT)CVD; SiGe epitaxy

Indexed keywords

ACTIVATION ENERGY; ADSORPTION; CHEMICAL VAPOR DEPOSITION; DESORPTION; DISSOCIATION; EPITAXIAL GROWTH; MONOLAYERS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; THERMAL EFFECTS;

EID: 0032046535     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)01127-9     Document Type: Article
Times cited : (44)

References (14)
  • 12


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.