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Volumn 318, Issue 1-2, 1998, Pages 1-5
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Atomic control of doping during SiGe epitaxy
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Author keywords
Atomic layer doping; LP(RT)CVD; SiGe epitaxy
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Indexed keywords
ACTIVATION ENERGY;
ADSORPTION;
CHEMICAL VAPOR DEPOSITION;
DESORPTION;
DISSOCIATION;
EPITAXIAL GROWTH;
MONOLAYERS;
SEMICONDUCTING FILMS;
SEMICONDUCTING SILICON COMPOUNDS;
THERMAL EFFECTS;
ATOMIC LAYER DOPING;
SEMICONDUCTOR DOPING;
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EID: 0032046535
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(97)01127-9 Document Type: Article |
Times cited : (44)
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References (14)
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