Reduction of base resistance and increase in cutoff frequency of Si bipolar transistor using rapid vapor-phase doping

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 B, 2000, Pages 1987-1991

  Kiyota, Yukihiro ^a   Kikuchi, Toshiyuki ^a   Washio, Katsuyoshi ^a   Inada, Taroh ^b  

^a HITACHI LTD   (Japan)

^b HOSEI UNIVERSITY   (Japan)

Author keywords

Base resistanc; Cutoff frequency; Maximum oscillation frequency; RVD; Si bipolar transistor

Indexed keywords

COMPUTER SIMULATION; FREQUENCIES; ION IMPLANTATION; OSCILLATIONS; PHASE TRANSITIONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; TWO DIMENSIONAL;

LOW BASE RESISTANCE; RAPID VAPOR PHASE DOPING; SILICON BIPOLAR TRANSISTOR;

BIPOLAR TRANSISTORS;

EID: 0033706515     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.1987     Document Type: Article

References (14)

1. F. Sato, T. Hashimoto, T. Tatsumi and T. Tashiro: IEEE Trans. Electron Devices ED-42 (1995) 483.
2. D. L. Harame, J. H. Comfort, J. D. Cressler, E. F. Crabbe, J. Y.-C. Sun, B. S. Meyerson and T. Tice: IEEE Trans. Electron Devices ED-42 (1995) 455.
3. M. Ugajin, J. Kodate, Y. Kobayashi, S. Konaka and T. Sakai: Tech. Dig. Int. Electron Device Meet. (1995) p. 735.
4. Y. Kiyota, F. Yano, S. Suzuki and T. Inada: J. Vac. Sci. & Technol. A 16 (1998) 1.
5. Y. Kiyota, T. Nakamura, K. Muraki, H. Niwayama and T. Inada: Jpn. J. Appl. Phys. 34 (1995) 2981.
6. Y. Kiyota, M. Matsushima, Y. Kaneko, M. Kanetomo and Y. Tamaki: Appl. Phys. Lett. 64 (1994) 910.
7. T. Uchino, Y. Kiyota and T. Shiba: Tech. Dig. Symp. VLSI Technology (1999) T7B-3.
8. Y. Kiyota, E. Ohue, T. Onai, K. Washio, M. Tanabe and T. Inada: Tech. Dig. IEEE Bipolar/BiCMOS Circuits and Technology Meet. (1996) p. 173.
9. T. Hashimoto, T. Kikuchi, K. Watanabe, S. Wada, Y. Tamaki, M. Kondo, S. Kondo, N. Natsuaki and N. Owada: Tech. Dig. of IEEE Bipolar/BiCMOS Circuits and Technology Meeting (1998) p. 152.
10. T. Hashimoto, T. Kikuchi, K. Watanabe, N. Ohashi, T. Saito, H. Yamaguchi, S. Wada, N. Natsuaki, M. Kondo, S. Kondo, Y. Homma, N. Owada and T. Ikeda: Tech. Dig. Int. Electron Device Meet. (1998) p. 209.
11. T. Uchino, T. Shiba, T. Kikuchi, Y. Tamaki, A. Watanabe and Y. Kiyota: IEEE Trans. Electron Devices ED-42 (1995) 406.
12. L. Zhong, Y. Kirino, Y. Matsushita, Y. Aiba, K. Hayashi, R. Takeda, H. Shirai, H. Saito, J. Matsushita and J. Yoshikawa: Appl. Phys. Lett. 68 (1996) 1229.
13. W. L. Harrington, C. W. Magee, M. Pawlik, D. F. Downey, C. M. Osbum and S. B. Felch: J. Vac. Sci. & Technol. B 16 (1998) 286.
14. M. Tanabe, H. Shimamoto, T. Onai and K. Washio: IEICE Trans. Electron. E79-C (1996) 165.