Saturated adsorption of PH3 on Si(100):P and its application to digital control of phosphorus coverage on Si(100) surface

Applied Surface Science

Volumn 151, Issue 1, 1999, Pages 148-152

  Tsukidate, Y ^a   Suemitsu, M ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMISORPTION; CRYSTAL ORIENTATION; DIGITAL CONTROL SYSTEMS; DOPING (ADDITIVES); PHOSPHORUS COMPOUNDS; SATURATION (MATERIALS COMPOSITION); SILICON; TEMPERATURE PROGRAMMED DESORPTION;

PHOSPHINE;

ADSORPTION;

EID: 0033185093     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00272-X     Document Type: Article

References (12)

1. Maity N., Xia L.-Q., Engstrom J.R. Appl. Phys. Lett. 66:1995;1909.
2. Yu M.L., Vitkavabe D.J., Meyerson B.S. J. Appl. Phys. 59:1986;4032.
3. Bratu P., Brenig W., Groß A., Hartmann M., Höfer U., Kratzer P., Russ R. Phys. Rev. B. 54:1996;5978.
4. Suemitsu M., Nakazawa H., Miyamoto N. Appl. Surf. Sci. 82/83:1994;449.
5. Wang Y., Bronikowski M.J., Hamers R.J. J. Phys. Chem. 98:1994;5966.
6. Shan J., Wang Y., Hamers R.J. J. Phys. Chem. 100:1996;4961.
7. Yu M.L., Meyerson B.S. J. Vac. Sci. Technol. A. 2:1984;446.
8. Hamers R.J., Wang Y., Shan J. Appl. Surf. Sci. 107:1996;25.
9. Colaiani M.L., Chen P.J., Yates J.T. Jr. J. Vac. Sci. Technol. A. 12:1994;2995.
10. Maity N., Xia L.-Q., Engstrom J.R. Surf. Sci. 344:1995;203.
11. Wang Y., Chen X., Hamers R.J. Phys. Rev. B. 50:1994;4534.
12. Suemitsu M., Tsukidate Y., Nakazawa H., Enta Y. J. Vac. Sci. Technol. A. 16:1998;1772.