Ultrahigh electron mobilities in Si1-xGex/Si/Si1-xGex heterostructures with abrupt interfaces formed by solid-phase epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1308-1310

  Sugii, Nobuyuki ^a   Nakagawa, Kiyokazu ^a   Kimura, Yoshinobu ^a   Yamaguchi, Shinya ^a   Miyao, Masanobu ^a  

^a HITACHI LTD   (Japan)

Author keywords

Electron mobility; Heterostructure; Molecular beam epitaxy; Si1 xGex; Solid phase epitaxy

Indexed keywords

EID: 0001082197     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1308     Document Type: Article

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