Stress induced leakage currents in N-MOSFETs submitted to channel hot carrier injections

Journal of Non-Crystalline Solids

Volumn 245, Issue 1-3, 1999, Pages 41-47

  Goguenheim, D ^a   Bravaix, A ^a   Vuillaume, D ^b   Mondon, F ^c   Jourdain, M ^d   Meinertzhagen, A ^d  

^a Inst Sup d'Electron Mediterranee   (France)

^b Institut Superieur de l'Electronique et du Numerique   (France)

^c UNIV GRENOBLE ALPES   (France)

^d UNIVERSITÉ DE REIMS CHAMPAGNE ARDENNE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; ELECTRIC POTENTIAL; GATES (TRANSISTOR); HOT CARRIERS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; SEMICONDUCTING SILICON; SILICA; STRESSES;

STRESS INDUCED LEAKAGE CURRENT (SILC);

MOSFET DEVICES;

EID: 0032656883     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00852-7     Document Type: Article

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