The residual electrically active damage in low energy boron implanted silicon: Rapid thermal annealing and implant mass effects

EPJ Applied Physics

Volumn 3, Issue 1, 1998, Pages 49-52

  Kaabi, L ^a,b   Ben Brahim, J ^a   Remaki, B ^b   Gontrand, C ^b   El Omari, H ^b   Bureau, J C ^b   Sassi, Z ^b   Balland, B ^b  

^a UNIVERSITY OF CARTHAGE   (Tunisia)

^b UNIVERSITÉ DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ION IMPLANTATION; OXIDES; RAPID THERMAL ANNEALING; SEMICONDUCTING BORON; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES;

ELECTRICALLY ACTIVE DAMAGE; IMPLANT MASS EFFECTS;

POINT DEFECTS;

EID: 0031635319     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:1998203     Document Type: Article

References (10)

1. L. Kaabi, C. Gontrand, M. Lemiti, B. Balland, Phys. Stat. Sol. (a) 138, 99-109 (1993).
2. L. Kaabi, B. Remaki, C. Gontrand, P.F. Lo, B. Balland, Nucl. Instrum. Meth. B 112, 196-200 (1996).
3. S.M. Sze, Physics of Semi-conductor Devices (Wiley, New York, 1981).
4. D.V. Lang, J. Appl. Phys. 45, 3023-3032 (1974).
5. 2/Si-mono. Effet d'un recuit thermique RTA sur la diffusion de l'implant et le spectre de défauts ponctuels, Thèse de doctorat. Institut National des Sciences Appliquées, Lyon, 1994.
6. S. Tamulevicius, B.G. Svensson, M.O. Aboelfotoh, A. Hallén, J. Appl. Phys. 71, 4212-4216 (1992).
7. B. Remaki, J.J. Marchand, B. Balland, J. Electr. Mater. 18, 85-90 (1989).
8. J. Lalita, C. Jagadish, B.G. Svensson, Nucl. Instrum. Meth. B 106, 237-241 (1995).
9. A. Hallén, P. Häkansson, N. Keskitalo, J. Olsson, A. Brunelle, S. Della-Negra, Y. Le Beyec, Nucl. Instrum. Meth. B 106, 233-236 (1995).
10. C.M. Ransom, T.O. Sedgwick, S.A. Cohen, Mater. Res. Soc. Proc Syrnp. 52, 153-156 (1986).