SCOPUS 정보 검색 플랫폼

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 A, 2001, Pages 2178-2185

Nature of surface and bulk defect induced by low dose oxygen implantation in separation by implanted oxygen wafers

(4) Park, Jea Gun a Kim, Suk Goo a Lee, Gon Sub a Shim, Tae Hun b

a Hanyang University (South Korea)

b SAMSUNG Electronics (South Korea)

Author keywords

AFM; ELTRAN; FIB; HF defect; Island; Isolation defect; Park defect; SlMOX; TEM; Threading dislocation

Indexed keywords

ABRASION; ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); ELECTROSTATICS; ION IMPLANTATION; LASER APPLICATIONS; OXYGEN; SCATTERING; TRANSMISSION ELECTRON MICROSCOPY;

ISOLATION DEFECTS; OXYGEN WAFERS;

SILICON WAFERS;

EID: 0035301744 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.2178 Document Type: Article

Times cited : (6)

References (38)

1
- 0032075636
- (1998) IEEE Trans. Electron Devices , vol.45 , pp. 1000
- Eimori, T.¹ Oashi, T.² Morishita, F.³ Iwamatsu, T.⁴ Yamaguchi, Y.⁵ Okuda, F.⁶ Shimomura, K.⁷ Shimano, H.⁸ Sakashita, N.⁹ Arimoto, K.¹⁰ Inoue, Y.¹¹ Komori, S.¹² Inuishi, M.¹³ Nishimura, T.¹⁴ Miyoshi, H.¹⁵

2
- 0004765461
- Silicon-on-insulator technology and devices
- eds. P. L. F. Hemment et al.
- (1999) Electrochem. Soc. Proc. , vol.99 , Issue.3
- Assaderaghi, F.¹ Shahidi²

3
- 0031098541
- (1997) IEICE Trans. Electron. C , vol.80 , pp. 358
- Auberton-Herve, A.J.¹ Bruel, M.² Aspar, B.³ Maleville, C.⁴ Moriceau, H.⁵

4
- 0000472026
- (1997) Jpn. J. Appl. Phys. , vol.36 , pp. 1636
- Bruel, M.¹ Aspar, B.² Auberton-Herve, A.J.³

5
- 0033115216
- (1999) J. Electron. Mater. , vol.28 , pp. 372
- Giles, L.F.¹ Kunii, Y.²

6
- 0004735132
- Osaka
- (1995) Ext. Abstr. 1995 Int. Conf. Solid State Devices and Materials , pp. 566
- Mitani, K.¹

7
- 0004767569
- Silicon-On-Insulator Technology and Devices
- eds. P. L. F. Hemment et al.
- (1996) Electrochem. Soc. Proc. , vol.96 , Issue.3 , pp. 34
- Maleville, C.¹ Aspar, B.² Poumeyrol, T.³ Moriceau, H.⁴ Bruel, M.⁵

8
- 0031099328
- (1997) IEICE Trans. Electron. C , vol.80 , pp. 378
- Sakaguchi, K.¹ Sato, N.² Yamagata, K.³ Atoji, T.⁴ Fujiyama, Y.⁵ Nakayama, J.⁶ Yonehara, T.⁷

9
- 0010978953
- Silicon-on-insulator technology and devices
- eds. P. L. F. Hemment et al.
- (1999) Electrochem. Soc. Proc. , vol.99 , Issue.3 , pp. 111
- Yonehara, T.¹ Sakaguchi, K.² Sato, N.³

10
- 0002378821
- Osaka
- (1995) Ext. Abstr. 1995 Int. Conf. Solid State Devices and Materials , pp. 557
- Imai, M.¹ Katayama, T.² Jablonski, J.³

11
- 0032666237
- (1999) J. Mater. Sci. , vol.10 , pp. 365
- Matsumura, A.¹ Kawamura, K.² Hamaguchi, I.³ Takayama, S.⁴ Yano, T.⁵ Nagatake, Y.⁶

12
- 0031102262
- (1997) IEICE Trans. Electron. C , vol.80 , pp. 364
- Nakashima, S.¹

13
- 0032680226
- (1999) Jpn. J. Appl. Phys. , vol.38 , pp. 2694
- Aga, H.¹ Nakano, M.² Mitani, K.³

14
- 0000825059
- (1997) Jpn. J. Appl. Phys. , vol.36 , pp. 1646
- Mitani, K.¹ Aga, H.² Nakano, M.³

15
- 0004786641
- Sixth Int. Symp. silicon-on-insulator technology and devices
- eds. S. Cristoloveanu et al.
- (1994) Electrochem. Soc. Proc. , vol.94 , Issue.11 , pp. 296
- Abe, T.¹ Sunakawa, K.² Arai, K.³

16
- 0004791109
- Nantucket
- (1994) Proc. IEEE SOI Conf. , pp. 1111
- Sadana, D.K.¹ Lasky, J.² Hovel, H.J.³ Petrillo, K.⁴ Roitman, P.⁵

17
- 0042535867
- Silicon-on-insulator technology and devices
- eds. P. L. F. Hemment et al.
- (1996) Electrochem. Soc. Proc. , vol.96 , Issue.3 , pp. 99
- Aspar, B.¹ Moriceau, H.² Auberton-Herve, A.J.³

18
- 0000779098
- (1999) Jpn. J. Appl. Phys. , vol.38 , pp. 2477
- Kawamura, K.¹ Yano, T.² Hamaguchi, I.³ Takayama, S.⁴ Nagatake, Y.⁵ Matsumura, A.⁶

19
- 84975402929
- (1995) J. Electrochem. Soc. , vol.142 , pp. 1248
- Stoemenos, J.¹ Garcia, A.² Aspar, B.³ Margail, J.⁴

20
- 0029678908
- (1996) J. Electron. Mater. , vol.25 , pp. 7
- Bagchi, S.¹ Lee, J.D.² Krause, S.J.³ Roitman, P.⁴

21
- 0028272748
- (1994) Mater. Res. Soc. Proc. , pp. 753
- Lee, J.D.¹ Park, J.C.² Venables, D.³ Krause, S.J.⁴ Roitman, P.⁵

22
- 0004765462
- (1993) Nucl. Instrum. Methods B , vol.74 , pp. 65
- Venables, D.¹ Jones, K.S.²

23
- 3743143644
- Sixth Int. Symp. silicon-on-insulator technology and devices
- ed. S. Cristoloveanu
- (1994) Electrochem. Soc. Proc. , vol.94 , Issue.11 , pp. 62
- Aspar, B.¹ Pudda, C.² Papon, A.M.³ Auberton-Herve, A.J.⁴ Lamure, J.M.⁵

24
- 0027553329
- (1993) J. Mater. Res. , vol.8 , pp. 523
- Nakashima, S.¹ Izumi, K.²

25
- 0020140766
- (1982) Jpn. J. Appl. Phys. , vol.21 , pp. 890
- Homma, Y.¹ Yoshima, M.² Hayashi, T.³

26
- 0017998279
- (1978) Electron. Lett. , vol.14 , pp. 593
- Izumi, K.¹ Doken, N.² Ariyoshi, H.³

27
- 84975402929
- (1995) J. Electrochem. Soc. , vol.142 , pp. 1248
- Stoemenos, J.¹ Garcia, A.² Aspar, B.³ Margail, J.⁴

28
- 0030399006
- Oct.
- (1996) Proc. 1996 IEEE Int. SOI Conf. , pp. 30
- Jablonski, J.¹ Saito, M.² Miyamura, Y.³ Katayama, T.⁴ Nakashima, S.⁵

29
- 0004766866
- Silicon-on-insulator technology and devices
- eds. U. Gösele et al.
- (1997) Electrochem. Soc. Proc. , vol.97 , Issue.36 , pp. 64
- Beggans, M.¹ Farmer, K.² Federici, J.³ Diggs T.G., Jr.⁴ Garofalini, S.⁵ Hensley, D.⁶

30
- 0004795153
- ULSI Process Integration
- eds. C. L. Claeys et al.
- (1999) Electrochem. Soc. Proc. , vol.99 , Issue.18 , pp. 267
- Shahidi, G.G.¹

31
- 0347661361
- (1994) Electrochem. Soc. Proc. , vol.94 , Issue.1 , pp. 57
- Park, J.G.¹ Kirk, H.² Lee, G.S.³ Lee, H.K.⁴ Lee, D.M.⁵ Rozgonyi, G.A.⁶

32
- 0004734232
- (2000) Future FAB Int. Issue , pp. 229
- Chae, S.K.¹ Sun, J.J.² Liu, B.Y.H.³ You, S.H.⁴

33
- 0001294188
- (1992) J. Appl. Phys. , vol.72 , pp. 2185
- Itsumi, M.¹ Nakajima, O.² Shiono, N.³

34
- 0001635004
- (1995) J. Appl. Phys. , vol.78 , pp. 1940
- Itsumi, M.¹ Tomita, M.² Yamawaki, M.³

35
- 0001274178
- (1995) J. Appl. Phys. , vol.78 , pp. 5984
- Itsumi, M.¹ Ahiya, H.² Ueki, T.³

36
- 0030087008
- (1996) Jpn. J. Appl. Phys. , vol.35 , pp. 812
- Itsumi, M.¹ Ahiya, H.² Ueki, T.³ Tomita, M.⁴ Yamaki, M.⁵

37
- 0001056803
- (1996) J. Appl. Phys. , vol.80 , pp. 6661
- Itsumi, M.¹ Ahiya, H.² Tomito, M.³ Ueki, T.⁴ Ramawaki, M.⁵

38
- 4243332221
- (1985) IEDM Tech. Dig. , vol.388 , pp. 1990
- Kaa, D.B.¹ Mcvittie, J.D.² Nix, W.D.³ Saraswat, K.C.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.