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Volumn 10, Issue 5, 1999, Pages 365-371

Low-dose SIMOX wafers for LSIs fabricated with internal-thermal-oxidation (ITOX) process: Electrical characterization

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUIT MANUFACTURE; LSI CIRCUITS; THERMOOXIDATION;

EID: 0032666237     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/a:1008997423606     Document Type: Article
Times cited : (18)

References (16)
  • 9
    • 0345093560 scopus 로고    scopus 로고
    • Private communication
    • S. NAKASHIMA, Private communication.
    • Nakashima, S.1
  • 11
    • 0000779098 scopus 로고    scopus 로고
    • K. KAWAMURA, T. YANO, I. HAMAGUCHI, S. TAKAYAMA, Y. NAGATAKE and A. MATSUMURA, in Extended Abstract of 1998 International Conference on Solid State Devices and Materials, Hiroshima, September 1998; Jpn. J. Appl. Phys. 38 (1999) 2477.
    • (1999) Jpn. J. Appl. Phys. , vol.38 , pp. 2477


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.