Effect of oxidizing ambient on the generation of microdefects in low-dose SIMOX wafers

IEEE International SOI Conference

Volumn , Issue , 1996, Pages 30-31

  Jablonski, J ^a   Saito, M ^a   Miyamura, Y ^a   Katayama, T ^a   Nakashima, S ^a  

^a Komatsu Electronic Metals Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); HIGH TEMPERATURE EFFECTS; INTERFACES (COMPUTER); SEMICONDUCTING SILICON; STACKING FAULTS; SUBSTRATES; THERMOOXIDATION; TRANSMISSION ELECTRON MICROSCOPY;

MICRODEFECTS; OXIDIZING AMBIENT;

SILICON WAFERS;

EID: 0030399006     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)