Study of HF defects in thin, bonded silicon-on-insulator dependent on original wafers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 5 A, 1999, Pages 2694-2698

  Aga, Hiroji ^a   Nakano, Masatake ^a   Mitani, Kiyoshi ^a  

^a SHIN ETSU CHEMICAL CO LTD   (Japan)

Author keywords

Bonded SOI; COP; HF defect; PACE

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; EPITAXIAL GROWTH; HYDROGEN; INTERFACES (MATERIALS); PLASMA ETCHING; POINT DEFECTS; SILICON ON INSULATOR TECHNOLOGY;

CRYSTAL ORIGINATED PARTICLES (COP); PLASMA ASSISTED CHEMICAL ETCHING (PACE);

SILICON WAFERS;

EID: 0032680226     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.2694     Document Type: Article

References (7)

1. K. Mitani, H. Aga and M. Nakano: Jpn. J. Appl. Phys. 36 (1997) 1646.
2. P. B. Mumola, G. J. Gardopee, T. Feng, A. M. Ledger, P. J. Clapis and P. E. Miller: Proc. ECS 2nd Int. Symp. Wafer Bonding, PV93-29 (1993) p. 410.
3. H. Aga, N. Kobayashi and K. Mitani: Proc. ECS 4th Int. Symp. Semiconductor Wafer Bonding, PV97-36 (1997) p. 552.
4. D. K. Sadana, J. Lasky, H. J. Hovel, K. Petrillo and P. Roitman: Proc. IEEE Int. SOI Conf. 94CH35722 (1994) p. 111
5. W. P. Maszara: Meet. Abstr. ECS 8th Int. Symp. SOI Technologies and Devices, 97-2 (1997) p. 2303
6. S. Tomita, Y. Ikeda and M. Sano: Ext. Abstr. 44th Spring Meet. Japan Society of Appl. Phys. 29p-G-9 (1997) [in Japanese]
7. N. Kobayashi, T. Oka, H. Aga, K. Mitani, A. Kanai and M. Katayama: Ext. Abstr. 57th Autumn Meet. Japan Society of Appl. Phys. Sa-ZG-3 (1996) [in Japanese]