Mechanism of defect formation in low-dose oxygen implanted silicon-on-insulator material

Journal of Electronic Materials

Volumn 25, Issue 1, 1996, Pages 7-12

  Bagchi, S ^a   Lee, J D ^a   Krause, S J ^a   Roitman, P ^b  

^a ARIZONA STATE UNIVERSITY   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Dislocation half loop; Multiply faulted defect; Silicon islands; SIMOX; Stacking fault pyramid; Threading dislocation

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); ION IMPLANTATION; OXYGEN; STACKING FAULTS; THERMAL EFFECTS;

DEFECT DENSITY; DISLOCATION HALF LOOPS; MULTIPLY FAULTED DEFECTS; SILICON ISLANDS; SIMOX MATERIALS; STACKING FAULT PYRAMIDS; THREADING DISLOCATION;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0029678908     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666167     Document Type: Article

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