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Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1646-1649

Effective KOH etching prior to modified secco etching for analyzing defects in thin bonded silicon on insulator (SOI) wafers

Author keywords

Bonded SOI; KOH etching; Modified Secco etching; PACE; Touch polishing

Indexed keywords


EID: 0000825059     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1646     Document Type: Article
Times cited : (5)

References (10)
  • 8
    • 3743133347 scopus 로고    scopus 로고
    • eds. P. L. F. Hemment et al. The Electrochem. Soc., Pennington, NJ, USA, PV96-3
    • D. K. Sadana: Proc. Silicon on Insulator Technology and Devices, eds. P. L. F. Hemment et al. (The Electrochem. Soc., Pennington, NJ, USA, 1996) PV96-3, p. 3.
    • (1996) Proc. Silicon on Insulator Technology and Devices , pp. 3
    • Sadana, D.K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.