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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 B, 2001, Pages 2810-2813

Degradation of Ta2O5 gate dielectric by TiCl4-based chemically vapor deposited TiN film in W/TiN/Ta2O5/Si system

(4) Joo Wan Lee, a Chang Hee Han, a Park, J S a Jim Won Park, a

a Hynix Semiconductor Inc (South Korea)

Author keywords

Annealing; Chemical vapor deposition (CVD); Diffusion; Reduction; Residual Cl; Tantalum pentoxide; TiCl4; TiN; Void

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; GATES (TRANSISTOR); LEAKAGE CURRENTS; PHYSICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; TANTALUM COMPOUNDS; THERMAL DIFFUSION; THERMODYNAMIC STABILITY; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

GATE DIELECTRICS; MICROVOIDS;

DIELECTRIC MATERIALS;

EID: 0035300698 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.2810 Document Type: Article

Times cited : (2)

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