Direct measurement of gate depletion in high breakdown (405 V) AlGaN/GaN heterostructure field effect transistors

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 55-58

  Vetury, R ^a   Wu, Y F ^a   Fini, P T ^a   Parish, G ^a   Keller, S ^a   DenBaars, S P ^a   Mishra, U K ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; GATES (TRANSISTOR); SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

FLOATING SCHOTTKY GATES; GALLIUM NITRIDE; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (HFET);

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0032256580     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)