Stability of plasma deposited thin film transistors - comparison of amorphous and microcrystalline silicon

Thin Solid Films

Volumn 383, Issue 1-2, 2001, Pages 117-121

  Wehrspohn, R B ^a   Deane, S C ^a   French, I D ^a   Powell, M J ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; BINDING ENERGY; DEPOSITION; GRAIN BOUNDARIES; PLASMA APPLICATIONS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; THRESHOLD VOLTAGE;

MICROCRYSTALLINE SILICON;

THIN FILM TRANSISTORS;

EID: 0035247830     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01581-9     Document Type: Article

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