Effect of the amorphous silicon alpha-gamma transition on thin film transistor performance

Materials Research Society Symposium - Proceedings

Volumn 467, Issue , 1997, Pages 875-880

  French, I D ^a   Deane, S C ^a   Murley, D T ^a   Hewett, J ^a   Gale, I G ^a   Powell, M J ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ALPHA PARTICLES; AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; GAMMA RAYS; HYDROGEN BONDS; INFRARED SPECTROSCOPY; PERFORMANCE; STABILITY;

AMORPHOUS SILICON THIN FILM TRANSISTORS; HYDROGENATED AMORPHOUS SILICON;

THIN FILM TRANSISTORS;

EID: 0031378803     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-467-875     Document Type: Conference Paper

References (13)