Effect of amorphous silicon material properties on the stability of thin film transistors: Evidence for a local defect creation model

Journal of Non-Crystalline Solids

Volumn 266-269 A, Issue , 2000, Pages 459-463

  Wehrspohn, R B ^a   Deane, S C ^a   French, I D ^a   Powell, M J ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000248048     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0022-3093(99)00777-2     Document Type: Article

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