Barrier capability of TaNx films deposited by different nitrogen flow rate against Cu diffusion in Cu/TaNx/n+-p junction diodes

Solid-State Electronics

Volumn 45, Issue 1, 2001, Pages 149-158

  Yang, Wen Luh ^a   Wu, Wen Fa ^b   Liu, Don Gey ^a   Wu, Chi Chang ^a   Ou, Keng Liang ^c  

^a FENG CHIA UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; HOLE TRAPS; INTERDIFFUSION (SOLIDS); NITROGEN; SEMICONDUCTING FILMS; SEMICONDUCTOR JUNCTIONS; SPUTTER DEPOSITION; SURFACE ROUGHNESS; TANTALUM COMPOUNDS;

JUNCTION DIODES; NITROGEN FLOW RATES;

SEMICONDUCTOR DIODES;

EID: 0035152088     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00228-8     Document Type: Article

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