Diffusion barrier properties of metallorganic chemical vapor deposited tantalum nitride films against Cu metallization

Journal of the Electrochemical Society

Volumn 146, Issue 10, 1999, Pages 3724-3730

  Cho, Sung Lae ^a,b,c,d   Kirn, Ki Bum ^a,b,c,d   Min, Seok Hong ^a,b,c,d   Shin, Hyun Kook ^a,b,c,d   Kim, Sam Dong ^a,b,c,d  

^a Seoul National University   (South Korea)

^b Gangneung Wonju National University   (South Korea)

^c Ultra Pure Chemicals Incorporated   (South Korea)

^d Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIUM COMPOUNDS; ANNEALING; CARBON; COPPER; ELECTRIC CONDUCTIVITY OF SOLIDS; METALLIZING; METALLORGANIC CHEMICAL VAPOR DEPOSITION;

DIFFUSION BARRIER PROPERTIES; TANTALUM NITRIDE;

TANTALUM COMPOUNDS;

EID: 0033317724     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1392540     Document Type: Article

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