Phase formation behavior and diffusion barrier property of reactively sputtered tantalum-based thin films used in semiconductor metallization

Thin Solid Films

Volumn 353, Issue 1, 1999, Pages 264-273

  Chen, G S ^a   Lee, P Y ^b   Chen, S T ^a  

^a FENG CHIA UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; CRYSTAL MICROSTRUCTURE; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY MEASUREMENT; NITROGEN; PHASE TRANSITIONS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SPUTTER DEPOSITION; TANTALUM; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

TANTALUM NITRIDE; THERMALLY OXIDIZED SILICON;

THIN FILMS;

EID: 0033352088     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00431-9     Document Type: Article

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