Thin-Film properties and barrier effectiveness of chemically vapor deposited amorphous WSix film

Journal of the Electrochemical Society

Volumn 145, Issue 12, 1998, Pages 4206-4211

  Wang, M T ^a   Lin, Y C ^a   Lee, J Y ^a   Wang, C C ^a   Chen, M C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS FILMS; ANNEALING; CHEMICAL VAPOR DEPOSITION; COPPER; ELECTRIC CONDUCTIVITY OF SOLIDS; RESIDUAL STRESSES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; THERMAL EFFECTS; THIN FILMS; TUNGSTEN COMPOUNDS;

LOW-PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

SEMICONDUCTING FILMS;

EID: 0032300405     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838938     Document Type: Article

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