Study of nanocrystalline Ta(N,O) diffusion barriers for use in Cu metallization

Microelectronic Engineering

Volumn 33, Issue 1-4, 1997, Pages 269-275

  Stavrev, Momtchil ^a   Fischer, Dirk ^a   Preuß, Andrea ^a   Wenzel, Christian ^a   Mattern, Norbert ^b  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b IFW DRESDEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; COPPER; METALLIC FILMS; METALLIZING; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; TANTALUM COMPOUNDS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

DIFFUSION BARRIERS;

MICROELECTRONIC PROCESSING;

EID: 0002778029     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0167-9317(96)00054-8     Document Type: Article

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