In situ studies of the effect of silicon on GaN growth modes

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 98-105

  Munkholm, A ^a   Stephenson, G B ^a   Eastman, J A ^a   Auciello, O ^a   Murty, M V Ramana ^a   Thompson, Carol ^a,b   Fini, P ^c   Speck, J S ^c   DenBaars, S P ^c  

^a ARGONNE NATIONAL LABORATORY   (United States)

^b NORTHERN ILLINOIS UNIVERSITY   (United States)

^c University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; APPROXIMATION THEORY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

HOMOEPITAXIAL GROWTH; X RAY SCATTERING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034505625     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00656-4     Document Type: Article

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