Transition between the 1×1 and (√3×2√3)R30° surface structures of GaN in the vapor-phase environment

Physica B: Condensed Matter

Volumn 283, Issue 1-3, 2000, Pages 217-222

  Munkholm, A ^a   Thompson, C ^a,b   Stephenson, G B ^a   Eastman, J A ^a   Auciello, O ^a   Fini, P ^c   Speck, J S ^c   DenBaars, S P ^c  

^a ARGONNE NATIONAL LABORATORY   (United States)

^b NORTHERN ILLINOIS UNIVERSITY   (United States)

^c University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHASE TRANSITIONS; THERMAL EFFECTS; X RAY SCATTERING;

GALLIUM NITRIDE; SURFACE RECONSTRUCTION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033742841     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)01964-X     Document Type: Article

References (13)

1. Morkoc H., Mohammad S.N. Science. 267:1995;51.
2. S.P. DenBaars, S. Keller, MOCVD of Group III Nitrides, in: J.I. Pankove, T.D. Moustakas (Eds.), Gallium Nitride I, Academic Press, San Diego, 1998 (Chapter 2).
3. Stephenson G.B.et al. MRS Bull. 24(1):1999;21.
4. Munkholm A.et al. Phys. Rev. Lett. 83:1999;741.
5. Stephenson G.B.et al. Appl. Phys. Lett. 74:1999;3326.
6. Robinson I.K., Tweet D.J. Rep. Prog. Phys. 55:1992;599.
7. Feidenhans'l R. Surf. Sci. Rep. 10:1989;105.
8. Munkholm A.et al. Appl. Phys. Lett. 72:1998;2973.
9. Koleske D.D.et al. J. Appl. Phys. 84:1998;1998.
10. Mullins W.W. J. Appl. Phys. 59:1986;1341.
11. Bray A.J. Phys. Rev. B. 41:1990;6724.
12. van Saarloos W., Grant M. Phys. Rev. B. 37:1988;2274.
13. Song S.et al. Surf. Sci. 372:1997;37.