Layer-by-layer growth of GaN induced by silicon

Applied Physics Letters

Volumn 77, Issue 11, 2000, Pages 1626-1628

  Munkholm, A ^a   Thompson, Carol ^a,b   Ramana Murty, M V ^a   Eastman, J A ^a   Auciello, O ^a   Stephenson, G B ^a   Fini, P ^c   DenBaars, S P ^c   Speck, J S ^c  

^a ARGONNE NATIONAL LABORATORY   (United States)

^b NORTHERN ILLINOIS UNIVERSITY   (United States)

^c University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001499245     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1309023     Document Type: Article

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