Impurity Incorporation and the Surface Morphology of MOVPE Grown GaAs

Journal of Electronic Materials

Volumn 28, Issue 2, 1999, Pages 124-133

  Li, Jiang ^a   Kuech, T F ^a  

^a University of Wisconsin Madison   (United States)

Author keywords

GaAs; Impurities; Morphology; Semiconductors

Indexed keywords

CRYSTAL IMPURITIES; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SEMICONDUCTOR DOPING; SURFACE CHEMISTRY;

IMPURITY INCORPORATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033078876     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0230-8     Document Type: Article

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