Threshold temperature dependence of lateral-cavity quantum-dot lasers

IEEE Photonics Technology Letters

Volumn 10, Issue 12, 1998, Pages 1673-1675

  Zou, Z ^b   Shchekin, O B ^b   Park, G ^b   Huffaker, D L ^a,b   Deppe, D G ^a,b  

^a IEEE

^b The University of Texas at Austin   (United States)

Author keywords

Electroluminescence; Epitaxial growth; Quantum dots; Seimconductor lasers

Indexed keywords

ELECTROLUMINESCENCE; EPITAXIAL GROWTH; HETEROJUNCTIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; TEMPERATURE;

THERMAL COUPLING; THRESHOLD TEMPERATURE DEPENDENCE;

SEMICONDUCTOR LASERS;

EID: 0032301046     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.730465     Document Type: Article

References (8)

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